2

Structure of vapor-deposited GaxIn1−xAs crystals

Year:
1974
Language:
english
File:
PDF, 747 KB
english, 1974
22

Thermodynamic analysis of GaxIn1-xAsyP1-y CVD: Ga-In-As-P-H-Cl system

Year:
1980
Language:
english
File:
PDF, 302 KB
english, 1980
24

Crack formation in InP-GaxIn1−xAs-InP double-heterostructure fabrication

Year:
1976
Language:
english
File:
PDF, 359 KB
english, 1976
32

Anisotropic bending during epitaxial growth of mixed crystals on GaAs substrate

Year:
1972
Language:
english
File:
PDF, 455 KB
english, 1972
33

660 nm In0.5Ga0.5P light-emitting diodes on Si substrates

Year:
1988
Language:
english
File:
PDF, 474 KB
english, 1988
35

10.1295/koron.33.70

Year:
1976
File:
PDF, 1.54 MB
1976
39

InGaP orange light‐emitting diodes on Si substrates

Year:
1989
Language:
english
File:
PDF, 605 KB
english, 1989
40

A new grading layer for liquid epitaxial growth of GaxIn1−xAs on GaAs substrate

Year:
1975
Language:
english
File:
PDF, 523 KB
english, 1975
49

10.1295/koron.33.77

Year:
1976
File:
PDF, 1020 KB
1976